WebJun 5, 2024 · DIBL vs. 源漏穿通 vs.DIBL效应,是漏端引入的势垒降低(DIBL,Drain Induced Barrier Lowering)效应,指的是是小尺寸场效应晶体管(FET)中所出现的一种不良现象 … WebThe beam - test of china pin diodes at the cern sps accelerator produced satisfactory results. in addition, we studied the pin punch - through effect, and obtained the pin punch - …
punch through effect中文, punch through effect中文意思 - iChaCha
WebJun 10, 2024 · punch through是指器件的s、d因为耗尽区相接而发生的穿通现象。s、d对于sub有各自的耗尽区。当器件尺寸较小时,只要二者对衬底的偏压条件满足,就可能发 … http://blog.zy-xcx.cn/?id=6 dgpram
短沟道效应 - 百度百科
Web一方面由於半導體元件整體的尺度不斷縮小,一方面為加強閘極對通道的控制,閘極絕緣氧化層的厚度也愈來愈薄,使得電荷的穿隧效應變得更加明顯,也更加嚴重。電荷穿隧過絕緣 … http://www.86x.net/JISHU/Novices/201112/00000194.html WebOct 31, 2014 · Abstract: Punch through leakage is a main component of off-state leakage in bulk FinFETs and it is usually suppressed by forming a punch through stop layer (PTSL). … dgpn djibouti